| PART |
Description |
Maker |
| HYS72D128320 HYS72D128320GBR-6-C HYS72D128320GBR-7 |
184-Pin Registered Double Data Rate SDRAM Module
|
Qimonda AG
|
| HYS72D128321GBR-5-B HYS72D128321GBR-6-B HYS72D2562 |
184 - Pin Registered Double-Data-Rate SDRAM Module
|
Qimonda AG
|
| NT512D72S8PB0G |
184 pin Unbuffered DDR DIMM
|
ETC
|
| HYS72D32000GU-7-B HYS72D32000GU-7F-B HYS72D64320GU |
184-Pin Unbuffered Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块)
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块（2.584脚，512M的位寄存型的DDR - SDRAM内存模块余）
|
SIEMENS AG
|
| K4D26323AA-GL |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| 3TB41-15 |
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Screw Termination
|
Honeywell
|
| HYMD232646C8J-J HYMD232646C8J-D43 |
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
| HYMD232726A8J-J HYMD232726A8J-D43 HYMD232726A8J-D4 |
32M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
|
| KVR400X64C3A KVR400X64C3A512 |
512MB 64M x 64-Bit DDR400 CL3 184-Pin DIMM
|
Electronic Theatre Controls, Inc.
|
| M13S128324A-2M |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
